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Número de pieza | IRH7450 | |
Descripción | (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRH7450 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PD - 91807A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRH7450
IRH8450
N CHANNEL
MEGA RAD HARD
500Volt, 0.45Ω, MEGA RAD HARD HEXFET Product Summary
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Absolute Maximum Ratings
Part Number
IRH7450
IRH8450
BVDSS
500V
500V
RDS(on)
0.45Ω
0.45Ω
ID
11A
11A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Pre-Irradiation
Parameter
IRH7450, IRH8450
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
11
7.0 A
44
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy
500
mJ
IAR Avalanche Current
11 A
EAR
Repetitive Avalanche Energy
15 mJ
dv/dt
Peak Diode Recovery dv/dt
3.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
oC
Weight
11.5 (typical)
g
www.irf.com
1
10/14/98
1 page IRH7450, IRH8450 Devices
Post-Irradiation
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During
80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
www.irf.com
5
5 Page IRH7450, IRH8450 Devices
Pre-Irradiation
15V
VDS
L
D R IV E R
RG
1220VV
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig30a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRH7450.PDF ] |
Número de pieza | Descripción | Fabricantes |
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