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PDF IRH7150 Data sheet ( Hoja de datos )
| Número de pieza | IRH7150 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 90677D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204)
IRH7150
100V, N-CHANNEL
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRH7150 100K Rads (Si) 0.065Ω 34A
IRH3150 300K Rads (Si) 0.065Ω 34A
IRH4150 600K Rads (Si) 0.065Ω 34A
IRH8150 1000K Rads (Si) 0.065Ω 34A
TO-204AE
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
34
21 A
136
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
500
34
15
5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
03/21/01
1 page  
Pores-tI-rIrraraddiaiatitoionn
IRH7150
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During 80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
5 Page 
Pre-Irradiation
IRH7150
15V
VDS
L
D R IV E R
RG
2V0 VGS
tp
D .U .T
IA S
0.01Ω
+
- VDD
A
Fig 29a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 29b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 30a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRH7150.PDF ] | |
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