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PDF IDT16S60C Data sheet ( Hoja de datos )
| Número de pieza | IDT16S60C | |
| Descripción | 2nd Generation thinQ SiC Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDT16S60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2nd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDT16S60C
600 V
38 nC
16 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT16S60C
Package
PG-TO220-2-2
Marking
D16S60C
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
I F T C<140 °C
RMS forward current
I F,RMS f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I F,SM
Repetitive peak forward current
I F,RM
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
I F,max
∫i 2dt
V RRM
dv/ dt
T C=25 °C, t p=10 ms
T j=150 °C,
T C=100 °C, D =0.1
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
VR=0…480V
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Pin 1
C
Pin 2
A
Value
16
23
118
64
528
69
600
50
136
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.0
page 1
2006-03-14
1 page  
9 Typ. C stored energy
E C=f(V R)
20
IDT16S60C
10 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
40
16
30
12
20
8
10
4
0
0 100 200 300 400 500 600
V R [V]
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2006-03-14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDT16S60C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IDT16S60C | 2nd Generation thinQ SiC Schottky Diode | Infineon Technologies |
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