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PDF IDT12S60C Data sheet ( Hoja de datos )
| Número de pieza | IDT12S60C | |
| Descripción | 2nd Generation thinQ SiC Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDT12S60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2nd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDT12S60C
600 V
30 nC
12 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT12S60C
Package
PG-TO220-2-2
Marking
D12S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
Repetitive peak forward current
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
Mounting torque
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
I F,max T C=25 °C, t p=10 µs
∫i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt VR=0…480V
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
Value
12
18
98
49
410
48
600
50
115
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
Rev. 2.0
page 1
2006-03-14
1 page  
9 Typ. C stored energy
E C=f(V R)
15
IDT12S60C
10 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
40
30
10
20
5
10
0
0 100 200 300 400 500 600
V R [V]
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2006-03-14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDT12S60C.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| IDT12S60C | 2nd Generation thinQ SiC Schottky Diode | Infineon Technologies |
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