|
|
PDF FGA15N120ANTD Data sheet ( Hoja de datos )
| Número de pieza | FGA15N120ANTD | |
| Descripción | 1200V NPT Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGA15N120ANTD (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
May 2006
tm
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current (Note 1)
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJC
RθJC
RθJA
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
FGA15N120ANTD
1200
± 20
30
15
45
15
45
186
74
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.67
2.88
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA15N120ANTD Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Turn-On Characteristics vs. Gate
Resistance
100
tr
Figure 8. Turn-Off Characteristics vs. Gate
Resistance
1000
Common Emitter
V = 600V, V = 15V
CC GE
IC = 15A
TC = 25oC
TC = 125oC
td(off)
10
1
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 125oC
10 20 30 40 50 60 70
Gate Resistance, RG[Ω]
100
tf
10
0
10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 9. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
10 TC = 25oC
TC = 125oC
Eon
Eoff
1
0 10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 10. Turn-On Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10Ω
100 TC = 25oC
TC = 125oC
tr
10
10
td(on)
15 20 25
Collector Current, IC [A]
30
Figure 11. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
td(off)
tf
Figure 12. Switching Loss vs. Collector Current
Common Emitter
VGE = 15V, RG = 10Ω
10 TC = 25oC
TC = 125oC
1
Eon
Eoff
10
10
15 20 25
Collector Current, IC [A]
30
0.1
5
10 15 20 25
Collector Current, IC [A]
30
FGA15N120ANTD Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA15N120ANTD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGA15N120ANTD | 1200V NPT Trench IGBT | Fairchild Semiconductor |
| FGA15N120ANTDTU | IGBT | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |