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PDF FGA120N30D Data sheet ( Hoja de datos )
| Número de pieza | FGA120N30D | |
| Descripción | 300V PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
June 2006
FGA120N30D
300V PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat), Typ = 1.1V@ IC = 25A
• High Input Impedance
Description
Employing Unified IGBT Technology, FGA120N30D provides
low conduction and switching loss. FGA120N30D offers the
optimum solution for PDP applications where low condution loss
is essential.
C
GCE
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ICM
IF
IFM
PD
TJ
Tstg
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
(1) Repetitive test , pulse width = 100usec , Duty = 0.5
* Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT
Thermal Resistance, Junction-to-Case for Diode
Thermal Resistance, Junction-to-Ambient
G
E
FGA120N30D
300
± 30
120
300
10
40
290
116
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.43
1.56
40
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGA120N30D Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Charaacteristics
6
C o m m o n E m itte r
T = 125oC
C
5
4
3 120A
2 50A
25A
1
1 2 .5 A
0
4
8 12 16
G a te - E m itte r V o lta g e , V [V ]
GE
20
5000
4000
3000
2000
1000
0
0.1
C ie s
Coes
C re s
Comm on Emitter
V = 0V, f = 1MHz
GE
T = 25oC
C
1 10
Collector-Em itter Voltage, V [V]
CE
30
Figure 9. Gate Charge Characteristics
Figure 10. SOA Characteristics
14 Com m on Emitter
R = 8Ω
L
T = 25oC
12 C
10
Vcc = 200V
8
6
4
2
0
0 30 60 90 120
Gate Charge, Q [nC]
g
150
Figure 11. Turn-On Characteristics vs. Gate
Resistance
1000
tr
100
td(on)
10
0
10
Com m on Em itter
V = 200V, V = 15V
CC GE
I = 25A
C
T = 25oC
C
T = 125oC
C
20 30
Gate Resistance, R [Ω ]
G
40
50
1000
Ic MAX (Pulsed)
Ic M AX (Continuous)
100
DC Operation
10
50µs
100µs
1ms
1 Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.1 1
10
100
Collector - Em itter Voltage, V [V]
CE
1000
Figure 12. Turn-Off Characteristics vs. Gate
Resistance
1000
td(off)
100
10
0
tf
Com m on Em itter
V = 200V, V = 15V
CC GE
I = 25A
C
T = 25oC
C
T = 125oC
C
10 20 30 40 50
Gate Resistance, R [Ω]
G
FGA120N30D Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA120N30D.PDF ] | |
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