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PDF MA6J784 Data sheet ( Hoja de datos )
| Número de pieza | MA6J784 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Schottky Barrier Diodes (SBD)
MA6J784
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• IF(AV) = 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF and good rectification efficiency
2.0±0.1
(0.65)(0.65)
654
Unit: mm
0.7±0.1
1 23
0.2±0.05
5˚
0.16+–00..0160
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Average forward current *2
Peak forward current *2
Non-repetitive peak forward
surge current *1, 2
VR
VRRM
IF(AV)
IFM
IFSM
30
30
100
300
1
V
V
mA
mA
A
Junction temperature
Storage temperature
Tj 125
Tstg −55 to +125
°C
°C
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*2: Value of each diode in double diodes used.
■ Electrical Characteristics Ta = 25°C ± 3°C
1: Anode 1 4: Cathode 3
2: Anode 2 5: Cathode 2
3: Anode 3 6: Cathode 1
EIAJ: SC-88
SMini6-F1 Package
Marking Symbol: M8A
Internal Connection
654
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 100 mA
IR VR = 30 V
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 0.1 • IR , RL = 100 Ω
0.55
15
20
2.0
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 • IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: October 2003
SKH00133AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MA6J784.PDF ] | |
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