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PDF FDMC2523P Data sheet ( Hoja de datos )

Número de pieza FDMC2523P
Descripción P-Channel QFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC2523P Hoja de datos, Descripción, Manual

www.DataSheet4U.com
September 2006
FDMC2523P
P-Channel QFET® 
-150V, -3A, 1.5:
Features
„ Low Crss ( typical 10pF)
„ Fast Switching
„ Low gate charge ( typical 6.2 nC )
„ Improved dv / dt capability
„ RoHS compliant
tm
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology. This advanced technology
has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications
such as audio amplifier, high efficiency switching DC/DC
converters, and DC motor control.
Application
„ Active Clamp Switch
Bottom
8
7
6
5
Top
D
D
D
D
21
43
MLP 3.3x3.3
G
S
S
S
5
6
7
8
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current - Continuous (Tc=25°C)
ID - Continuous (Tc=100°C)
- Pulsed
PD
TJ, TSTG
TL
Power Dissipation (Steady State)
Operating and Storage Temperature
Maximum lead temperature for soldering purposes, 1/8” from case for
5 seconds
dv/dt
Peak Diode Recovery dv/dt
(Note 2)
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
RTJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
(Note 1b)
Device Marking
FDMC2523P
Device
FDMC2523P
Package
MLP 3.3X3.3
Reel Size
7"
Ratings
-150
±30
-3
-1.8
-12
25
-55 to +150
300
-5
5
52
108
Tape Width
8mm
4
3
2
1
Units
V
V
A
W
°C
°C
V/ns
°C/W
°C/W
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC2523P Rev. B1
1
www.fairchildsemi.com

1 page




FDMC2523P pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.005
1E-3
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
0.01 0.1 1 10
t, RECTANGULAR PULSE DURATION (s)
100
Figure 13. Transient Thermal Response Curve
1000
FDMC2523P Rev. B1
5 www.fairchildsemi.com

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