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PDF EDI2GG464128V Data sheet ( Hoja de datos )

Número de pieza EDI2GG464128V
Descripción 4MB SYNCHRONOUS CARD EDGE DIMM
Fabricantes White Electronic 
Logotipo White Electronic Logotipo



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White Electronic Designs
EDI2GG464128V
4MB SYNCHRONOUS CARD EDGE DIMM
FEATURES
4x128Kx64 Synchronous
Access Speed(s): TKHQV = 9.5, 10, 11, 12, 15ns
Flow-Through Architecture
Clock Controlled Registered Bank Enables (E1#,
E2#, E3#, E4#)
Clock Controlled Registered Address
Clock Controlled Registered Global Write (GW#)
Aysnchronous Output Enable (G#)
Internally self-timed Write
Gold Lead Finish
3.3V +10%, -5% Operation
Access Speed(s): tKHQV = 9.5, 10, 11, 12, 15ns
Common Data I/O
High Capacitance (30pf) drive, at rated Access
Speed
Single total array Clock
Multiple Vcc and GND
DESCRIPTION
The EDI2KG64128VxxD is a Synchronous SRAM,
60 position Card Edge DIMM (120 contacts) Module,
organized as 4x128Kx64. The Module contains eight
(8) Synchronous Burst Ram Devices, packaged in the
industry standard JEDEC 14mmx20mm TQFP placed on
a Multilayer FR4 Substrate. The module architecture is
defined as a Synchronous Only, Flow-Through, Early Write
Device. This module provides High Performance, Ultra
Fast access times at a cost per bit benefit over BiCMOS
Asynchronous SRAM based devices. As well as improved
cost per bit, the use of Synchronous or Synchronous Burst
devices or modules can ease the memory subsystem
design by reducing or easing the memory controller
requirement.
Synchronous operations are in relation to an externally
supplied clock, Registered Address, Registered Global
Write, Registered Enables as well as an Asynchronous
Output enable. All read and write operations to this module
are performed on Quad Words (64 bit operations).
Write cycles are internally self timed and are initiated by
a rising clock edge. This feature relieves the designer the
task of developing external write pulse width circuitry.
DQ0-DQ63
A015
E1#, E2#,
E3#, E4#
CK
GW#
G#
Vcc
Vss
NC
PIN NAMES
Input/Output Bus
Address Bus
Synchronous Bank Enables
Array Clock
Synchronous Global Write Enable
Asynchronous Output Enable
3.3V Power Supply
Ground
No Connect
*This product is subject to change without notice.
October 2004
Rev. 1
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 page




EDI2GG464128V pdf
White Electronic Designs
EDI2GG464128V
Operation
Synchronous Write-Bank 1
Synchronous Read-Bank 1
Synchronous Write-Bank 2
Synchronous Read-Bank 2
Synchronous Write-Bank 3
Synchronous Read-Bank 3
Synchronous Write-Bank 4
Synchronous Read-Bank 4
Snooze Mode
SYNCHRONOUS ONLY – TRUTH TABLE
E1# E2# E3# E4# GW#
L HHH L
LHHHH
H L HH L
H L HHH
HH L H L
HH L HH
HHHL L
HHH L H
XXXXX
G#
H
L
H
L
H
L
H
L
X
CK DQ
High-Z
High-Z
High-Z
High-Z
X High-Z
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
VIN -0.5V to Vcc +0.5V
Storage Temperature
-55°C to +125°C
Operating Temperature (Commercial)
0°C to +70°C
Operating Temperature (Industrial)
-40°C to +85°C
Short Circuit Output Current
20 mA
* Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in operational sections of this specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply Voltage
Supply Voltage
Input High
Input Low
Input Leakage
Output Leakage
Output High IOH = -4ma
Sym Min Typ Max Units
VCC 3.14 3.3
3.6
V
VSS 0.0 0.0
0.0
V
VIH 2.2 3.0 VCC + 0.3 V
VIL -0.3 0.0
0.8
V
ILI -2 1
2 µA
ILO -2
1
2 µA
VOH 2.4
-
-
V
Output Low IOL = 8ma
VOL -
-
0.4
V
DC ELECTRICAL CHARACTERISTICS – READ CYCLE
Description
Max
Symbol
Typ
9.5
10
11
12
15 Units
Power Supply Current
Icc1 1.55 2.8 2.2 2.2 2.7 2.0
A
Power Supply Current
Device Selected, No Operation
Icc .75 1.8 1.5 1.3 1.3 1.0 A
Snooze Mode
CMOS Standby
Clock Running-Deselect
IccZZ 200 300 300 300 300 300 mA
Icc3 400 500 500 500 500 500 mA
IccK 600 900 900 900 900 900 mA
*TBD
AC TEST LOAD
DQ ZZ00==5500WΩ
50Ω
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input and Output Timing Ref.
Output Test Equivalencies
I/O
Vss to 3.0V
1.25
See figure at left
Unit
V
V
V
October 2004
Rev. 1
Vt = 1.25V
Figure 1 – Output Load Equivalent
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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