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PDF FSQ311 Data sheet ( Hoja de datos )
| Número de pieza | FSQ311 | |
| Descripción | (FSQ0x65RN) Green Mode Fairchild Power Switch | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FSQ311 (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
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www.DataSheet4U.com
November 2006
FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311
Green Mode Fairchild Power Switch (FPS™) for
Quasi-Resonant Operation - Low EMI and High Efficiency
Features
Optimized for Quasi-Resonant Converter (QRC)
Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
High-Efficiency through Minimum Voltage Switching
Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
Advanced Burst-Mode Operation for Low Standby
Power Consumption
Pulse-by-Pulse Current Limit
Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD)
Under-Voltage Lockout (UVLO) with Hysteresis
Internal Start-up Circuit
Internal High-Voltage Sense FET (650V)
Built-in Soft-Start (15ms)
Applications
Power Supply for DVP Player and DVD Recorder
Power supply for Set-Top Box
Adapter
Auxiliary Power Supply for PC, LCD TV, and PDP TV
Description
A Quasi-Resonant Converter (QRC) generally shows
lower EMI and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for quasi-resonant
operation with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout, Leading Edge
Blanking (LEB), optimized gate driver, internal soft-start,
temperature-compensated precise current sources for
loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller
solution, the FSQ-series can reduce total cost,
component count, size and weight; while simultaneously
increasing efficiency, productivity, and system reliability.
This device provides a basic platform that is well suited
for cost-effective designs of quasi-resonant switching fly-
back converters.
Ordering Information
Product
Number(5)
PKG.
Operating
Temp.
Maximum Output Power(1)
Current RDS(ON)
230VAC±15%(2)
Limit
Max.
Adapter(3)
Open
Frame(4)
85-265VAC
Adapter(3)
Open
Frame(4)
Replaces
Devices
FSQ311 8-DIP -25 to +85°C 0.6A
19Ω
7W
10W
6W
8W
FSDL321
FSDM311
FSQ0165RN 8-DIP -25 to +85°C 0.9A
10Ω
10W
15W
9W
13W
FSDL0165RN
FSQ0265RN 8-DIP -25 to +85°C 1.2A
6Ω
14W
20W
11W
16W
FSDM0265RN
FSDM0265RNB
FSQ0365RN 8-DIP -25 to +85°C 1.5A
4.5Ω
17.5W
25W
13W
19W
FSDM0365RN
RSDM0365RNB
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open frame design at 50°C ambient.
5. PB-free package per JEDEC J-STD-020B.
FPSTM is a trademark of Fairchild Semiconductor Corporation.
© 2006 Fairchild Semiconductor Corporation
FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311 Rev. 1.0.0
www.fairchildsemi.com
1 page  
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SENSEFET SECTION
BVDSS
IDSS
Drain Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
FSQ0365RN
RDS(ON)
Drain-Source on-
State Resistance
FSQ0265RN
FSQ0165RN
FSQ311
FSQ0365RN
FSQ0265RN
CSS Input Capacitance FSQ0165RN
FSQ311
FSQ0365RN
COSS
Output Capacitance
FSQ0265RN
FSQ0165RN
FSQ311
FSQ0365RN
CRSS
Reverse Transfer
Capacitance
FSQ0265RN
FSQ0165RN
FSQ311
FSQ0365RN
td(on)
FSQ0265RN
Turn-On Delay Time
FSQ0165RN
FSQ311
FSQ0365RN
tr Rise Time
FSQ0265RN
FSQ0165RN
FSQ311
FSQ0365RN
td(off)
FSQ0265RN
Turn-Off Delay Time
FSQ0165RN
FSQ311
FSQ0365RN
tf Fall Time
FSQ0265RN
FSQ0165RN
FSQ311
Condition
VCC = 0V, ID = 100µA
VDS = 560V
TJ = 25°C, ID = 0.5A
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
Min. Typ. Max. Unit
650
100
3.5 4.5
5.0 6.0
8.0 10.0
14.0 19.0
315
550
250
162
47
38
25
18
9.0
17.0
10.0
3.8
11.2
20.0
12.0
9.5
34
15
4
19
28.3
55.0
30.0
33.0
32
25
10
42
V
µA
Ω
pF
pF
pF
ns
ns
ns
ns
© 2006 Fairchild Semiconductor Corporation
FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311 Rev. 1.0.0
5
www.fairchildsemi.com
5 Page 
Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the VCC pin, as
illustrated in Figure 20. When VCC reaches 12V, the FPS
begins switching and the internal high-voltage current
source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
VDC
Ca
VCC
2
5 Vstr
8V/12V
FSQ0365RN Rev.00
VCC good
ICH
Vref
Internal
Bias
Figure 20. Start-up Circuit
2. Feedback Control: FPS employs current mode
control, as shown in Figure 21. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the Rsense resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
thus pulling down the feedback voltage and reducing the
duty cycle. This event typically happens when the input
voltage is increased or the output load is decreased.
2.2 Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current mode PWM control. To counter this effect, the
FPS employs a leading edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
VCC
Idelay
Vref
IFB
VO
VFB
3
OSC
FOD817A
D1 D2
CB 3R
KA431
+
VFB* R
-
SenseFET
Gate
driver
FSQ0365RN Rev. 00
VSD
OLP
Rsense
Figure 21. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a quasi-
resonant switching technique to minimize the switching
noise and loss. The basic waveforms of the quasi-
resonant converter are shown in Figure 22. To minimize
the MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, as shown in Figure 22. The minimum drain
voltage is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 22.
Vds
VDC
VRO
VRO
Vsync
tF
Vovp (6V)
2.1 Pulse-by-Pulse Current Limit: Because current
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 21. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
thus clamping VFB*. Therefore, the peak value of the
current through the SenseFET is limited.
0.7V
MOSFET Gate
0.2V
300ns Delay
ON ON
FSQ0365RN Rev.00
Figure 22. Quasi-Resonant Switching Waveforms
© 2006 Fairchild Semiconductor Corporation
FSQ0365RN, FSQ0265RN, FSQ0165RN, FSQ311 Rev. 1.0.0
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet FSQ311.PDF ] | |
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