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PDF MA2YD33 Data sheet ( Hoja de datos )
| Número de pieza | MA2YD33 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Schottky Barrier Diodes (SBD)
MA2YD33
Silicon epitaxial planar type
For high frequency rectification
Features
Forward current (Average) IF(AV) = 500 mA rectification is possible
Small reverse current IR
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current *
VR
VRRM
IF(AV)
IFSM
30
30
500
3
Junction temperature
Tj 125
Storage temperature
Tstg –55 to +125
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
mA
A
°C
°C
1.6±0.1
1
0.80±0.05
Unit: mm
0 to 0.1
2
0.55±0.1
5°
0.45±0.1
0.16+–00..016
1: Anode
2: Cathode
Marking Symbol: 2V
Mini2-F1 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF1 IF = 10 mA
VF2 IF = 500 mA
0.3 0.4
0.5 0.55
V
Reverse current
IR VR = 30 V
50 µA
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
60 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 0.1 IR
RL = 100 Ω
5 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Publication date: December 2004
SKH00142AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MA2YD33.PDF ] | |
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