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PDF IRGB4062DPBF Data sheet ( Hoja de datos )

Número de pieza IRGB4062DPBF
Descripción (IRGB4062DPBF / IRGP4062DPBF) INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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No Preview Available ! IRGB4062DPBF Hoja de datos, Descripción, Manual

IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
G
• 100% of the parts tested for ILM 
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
E
n-channel
• Tight parameter distribution
• Lead Free Package
C
VCES = 600V
IC = 24A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
CC
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
GC
TO-220AB
IRGB4062DPbF
G
Gate
E
GC
E
GC
TO-247AC
TO-247AD
IRGP4062DPbF IRGP4062D-EPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Pa ra m e te r
V CES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
IL M
IF @ TC = 25°C
IF @ TC = 100°C
IFM
V GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
eDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Pa ra m e te r
R JC (IGBT)
R JC (Diode)
R JC (IGBT)
R JC (Diode)
R CS
R JA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247
Thermal Resistance Junction-to-Case-(each Diode) TO-247
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
48
24
72
96
48
24
96
±20
±30
250
125
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2013 International Rectifier
July 17, 2013

1 page




IRGB4062DPBF pdf
IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
1800
1600
1400
1200
1000
800
600
400
200
0
0
EOFF
EON
10 20 30 40 50 60
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
1600
1400
1200
1000
800
EON
EOFF
600
400
200
0
0 25 50 75 100 125
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
40
RG = 10
35
30
RG = 22
25
RG = 47
20
RG = 100
15
10
0
10 20 30 40 50
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
60
1000
tdOFF
100
tdON
tF
10 tR
1
10 20 30 40 50
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
1000
tdOFF
100
tdON
tF
tR
10
0
25 50 75 100 125
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
45
40
35
30
25
20
15
10
5
0 25 50 75 100
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
125
5 www.irf.com © 2013 International Rectifier
July 17, 2013

5 Page





IRGB4062DPBF arduino
IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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TO-220AB package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
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July 17, 2013

11 Page







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