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PDF FGPF30N30 Data sheet ( Hoja de datos )
| Número de pieza | FGPF30N30 | |
| Descripción | PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGPF30N30
300V, 30A PDP IGBT
Features
• High Current Capability
• Low saturation voltage: VCE(sat) =1.4V @ IC = 20A
• High Input Impedance
• Fast switching
• RoHS Complaint
Application
. PDP System
September 2006
General Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. FGPF30N30 offers
the optimum solution for PDP applications where low-condution
loss is essential.
TO-220F
1
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.1
* Ic_pluse limited by max Tj
FGPF30N30
300
± 30
80
46
18.5
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
oC
oC
oC
Typ.
--
--
Max.
2.7
62.5
Units
oC/W
oC/W
©2006 Fairchild Semiconductor Corporation
FGPF30N30 Rev. A
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
Common Emitter
VGE = 15V, RG = 20Ω
100 TC = 25oC
TC = 125oC
tr
Figure 14. Turn-Off Characteristics vs.
Collector Current
500
tf
100
td(off)
td(on)
10
5 10 15 20 25 30
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
5 10 15 20 25 30
Collector Current, IC [A]
Figure 16. Switching Loss vs Collector Current
500 1000
Eoff
100 Eon
10
0
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10 20 30 40 50 60 70
Gate Resistance, RG [Ω]
Figure 17. Transient Thermal Impedance of IGBT
100
10
1
0
Eon
Eoff
Common Emitter
VGE = 15V, RG = 20Ω
TC = 25oC
TC = 125oC
5 10 15 20
Collector Current, IC [A]
25
30
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
1E -3
1 E -5
1E -4
1 E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
5 www.fairchildsemi.com
FGPF30N30 Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGPF30N30.PDF ] | |
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