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PDF FDMC5614P Data sheet ( Hoja de datos )

Número de pieza FDMC5614P
Descripción P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC5614P Hoja de datos, Descripción, Manual

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March 2006
FDMC5614P
P-Channel PowerTrench® MOSFET
60V, 5.7A, 100m
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced Power Trench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V-20V).
Applications
„ Power management
„ Load switch
„ battery protection
Features
„ Max rDS(on) = 100 m@ VGS = -10 V,ID = -5.7A
„ Max rDS(on) = 135 m@ VGS = -4.5 V,ID = -4.4A
„ Low gate charge
„ Fast switching speed
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handling capability
„ RoHS Compliant
Bottom
6 78
5
Top
DD
D
D
5
6
4 321
G
S SS
MicroFET 3x3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
7
8
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
5614P
Device
FDMC5614P
Reel Size
7inch
Tape Width
12mm
4
3
2
1
Ratings
-60
±20
-5.7
-23
6.0
1.2
-55 to +150
Units
V
V
A
W
°C
52
108 °C/W
5
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC5614P Rev. B
1
www.fairchildsemi.com

1 page




FDMC5614P pdf
Typical Characteristics
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA =108 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/ t2
0.01
0.0001
0.001
0.01
0.1
1
10 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDMC5614P Rev. B
5 www.fairchildsemi.com

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