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Número de pieza | FDMC5614P | |
Descripción | P-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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March 2006
FDMC5614P
P-Channel PowerTrench® MOSFET
60V, 5.7A, 100mΩ
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor's advanced Power Trench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V-20V).
Applications
Power management
Load switch
battery protection
Features
Max rDS(on) = 100 mΩ @ VGS = -10 V,ID = -5.7A
Max rDS(on) = 135 mΩ @ VGS = -4.5 V,ID = -4.4A
Low gate charge
Fast switching speed
High performance trench technology for extremely low
rDS(on)
High power and current handling capability
RoHS Compliant
Bottom
6 78
5
Top
DD
D
D
5
6
4 321
G
S SS
MicroFET 3x3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
7
8
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
5614P
Device
FDMC5614P
Reel Size
7inch
Tape Width
12mm
4
3
2
1
Ratings
-60
±20
-5.7
-23
6.0
1.2
-55 to +150
Units
V
V
A
W
°C
52
108 °C/W
5
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC5614P Rev. B
1
www.fairchildsemi.com
1 page Typical Characteristics
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA =108 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/ t2
0.01
0.0001
0.001
0.01
0.1
1
10 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDMC5614P Rev. B
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC5614P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC5614P | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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