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PDF FDMC3300NZA Data sheet ( Hoja de datos )
| Número de pieza | FDMC3300NZA | |
| Descripción | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench | |
| Fabricantes | Fairchild Semiconductor | |
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December 2005
FDMC3300NZA
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench®
MOSFET
8A,20V,26mΩ
General Description
This Dual N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the RDS(on)@VGS=2.5v on special MicroFET
leadframe with all the drains on one side of the package.
Applications
AD FREE I
Li-lon Battery Pack
Features
RDS(ON) = 26mΩ @ VGS = 4.5 V, ID = 8A
RDS(ON) = 34mΩ @ VGS = 2.5 V, ID = 7A
>2000V ESD protection
Low Profile-1mm maxium-in the new package MicroFET
3.3x3.3 mm
Pb-free and RoHS Compliant
D 2 DD22
D1
D1
1
2
3
S2 G2
S1 G1
4
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
PD
TJ, TSTG
Power dissipation (Steady State)
Operating and Storage Junction Temperature Range
(Note 1a)
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
3300A
Device
FDMC3300NZA
Reel Size
7”
(Note 1a)
(Note 1b)
(Note 1)
Tape Width
12mm
©2005 Fairchild Semiconductor Corporation
FDMC3300NZA Rev B
1
8
7
6
5
Ratings
20
±12
8
40
2.4
-55 to +150
Units
V
V
A
W
oC
52
108 oC/W
5
Quantity
3000 units
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
1 DUTY CYCLE - DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
SINGLE PULSE
1E-3
10-4
10-3
10-2
10-1
100
101
102
103
t, Rectangular Pulse Duration(S)
Figure 12. Transient Thermal Response Curve
FDMC3300NZA RevB
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC3300NZA.PDF ] | |
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