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PDF FDMC2610 Data sheet ( Hoja de datos )
| Número de pieza | FDMC2610 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
September 2006
FDMC2610
N-Channel UltraFET Trench® MOSFET
200V, 9.5A, 200mΩ
Features
General Description
tm
Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
DC - DC Conversion
Bottom
Top
8
7
6
5
D
D
D
D
54
63
21
43
MLP 3.3x3.3
G
S
S
S
7
8
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage -Continuous (Silicon limited)
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
60
°C/W
Device Marking
FDMC2610
Device
FDMC2610
Package
MLP3.3X3.3
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
0.003
SINGLE PULSE
10-3
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100 101
t, RECTANGULAR PULSE DURATION(s)
102
Figure 13. Transient Thermal Response Curve
103
FDMC2610 Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC2610.PDF ] | |
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