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Número de pieza | FDD8451 | |
Descripción | N-Channel PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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April 2006
FDD8451
N-Channel PowerTrench® MOSFET
40V, 28A, 24mΩ
Features
General Description
tm
Max rDS(on) = 24mΩ at VGS = 10V, ID = 9A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7A
Low gate charge
Fast Switching
High performance trench technology for extremely low
rDS(on)
RoHS compliant
AD FREE I
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low rDS(on).
Application
DC/DC converter
Backlight inverter
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous @TC=25°C
ID -Continuous @TA=25°C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
Package
D-PAK(TO-252)
Reel Size
13’’
S
Ratings
40
±20
28
9
78
20
37
-55 to 150
Units
V
V
A
mJ
W
°C
4.1 °C/W
40 °C/W
96 °C/W
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD8451 Rev. B
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.005
10-5
PDM
SINGLE PULSE
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
Figure 13. Transient Thermal Response Curve
101
FDD8451 Rev. B
5 www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDD8451.PDF ] |
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