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Número de pieza | FDD8444 | |
Descripción | N-Channel PowerTrench | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD8444 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! June 2007
FDD8444
N-Channel PowerTrench® MOSFET
40V, 50A, 5.2mΩ
Features
Typ rDS(on) = 4mΩ at VGS = 10V, ID = 50A
Typ Qg(10) = 89nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V Systems
AD FREE I
tm
©2006 Fairchild Semiconductor Corporation
FDD8444 Rev B (W)
1
www.fairchildsemi.com
1 page Typical Characteristics
1000
10us
100
100us
10
CURRENT LIMITED
BY PACKAGE
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
80 VDD = 5V
60 TJ = 175oC
TJ = 25oC
40
20
TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
100
VGS = 10V
80
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 5V
VGS = 4.5V
40
VGS = 4V
20
0
0.0 0.3 0.6 0.9 1.2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
1.5
14
ID = 50A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
12
10 TJ = 175oC
8
6
4 TJ = 25oC
2
4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80μs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 50A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8444 Rev B (W)
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDD8444.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDD8444 | N-Channel PowerTrench | Fairchild Semiconductor |
FDD8444L_F085 | N-Channel PowerTrench MOSFET | FAIRCHILD |
FDD8445 | N-Channel PowerTrench | Fairchild Semiconductor |
FDD8445_F085 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
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