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PDF TC1413 Data sheet ( Hoja de datos )
| Número de pieza | TC1413 | |
| Descripción | HIGH-SPEED MOSFET DRIVERS | |
| Fabricantes | TelCom Semiconductor | |
| Logotipo |  |
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1
TC1413
TC1413N
3A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .....................................................4kV
s High Peak Output Current .................................. 3A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability ........................... 180 pF in 20nsec
s Short Delay Time .................................. 35nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................... 50µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance .................................... 2.7Ω
s Pinout Same as TC1410/11/12
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1413
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1413N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
GENERAL DESCRIPTION
The TC1413/1413N are 3A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity that occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500 mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.
As MOSFET drivers, the TC1413/1413N can easily
switch 1800pF gate capacitance in 20 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater output accuracy.
ORDERING INFORMATION
Part No.
TC1413COA
TC1413CPA
TC1413EOA
TC1413EPA
TC1413NCOA
TC1413NCPA
TC1413NEOA
TC1413NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp.Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
TC1413
INVERTING
OUTPUTS
VDD
INPUT
4.7V
300mV
NONINVERTING
OUTPUTS
TC1413N
OUTPUT
7
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
8
TC1413/N-8 10/14/96
4-201
1 page  
3A HIGH SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 1800pF
70
60
50
40 TA = 85°C
30 TA = 25°C
20
TA = –40°C
10
4 6 8 10 12 14 16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
110
100
90
80
70 TA = 85°C
60
TA = 25°C
50
40
30 TA = –40°C
20
4 6 8 10 12 14 16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
40
TRISE
30 TFALL
20
10
0
0
1000
2000
3000
4000
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
5000
1
TC1413
TC1413N
Fall Time vs. Supply Voltage
CLOAD = 1800pF
70
2
60
50
40
30
20
10
4
TA = 85°C
TA = 25°C
TA = –40°C
6 8 10 12
VDD (VOLTS)
14
16
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
100
90
80
70
60 TA = 85°C
50 TA = 25°C
40
30 TA = –40°C
20
4 6 8 10 12 14 16
VDD (VOLTS)
3
4
5
6
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
35
34 TD2
33
TD1
32
7
31
30
29
828
0
1000
2000
3000
4000
5000
CLOAD (pF)
4-205
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TC1413.PDF ] | |
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