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PDF TC1410 Data sheet ( Hoja de datos )
| Número de pieza | TC1410 | |
| Descripción | HIGH-SPEED MOSFET DRIVERS | |
| Fabricantes | TelCom Semiconductor | |
| Logotipo |  |
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1
TC1410
TC1410N
0.5A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .....................................................4kV
s High Peak Output Current ............................... 0.5A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability ............................ 500pF in 25nsec
s Short Delay Time .................................. 35nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ..................................... 16Ω
s Pinout Same as TC1411/12/13
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1410
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1410N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
GENERAL DESCRIPTION
The TC1410/1410N are 0.5V CMOS buffer/drivers .
They will not latch up under any conditions within their power
and voltage ratings. They are not subject to damage when
up to 5V of noise spiking of either polarity occurs on the
ground pin. They can accept, without damage or logic upset,
up to 500mA of current of either polarity being forced back
into their output. All terminals are fully protected against up
to 4 kV of electrostatic discharge.
As MOSFET drivers, the TC1410/1410N can easily
switch 500pF gate capacitance in 25nsec with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No.
TC1410COA
TC1410CPA
TC1410EOA
TC1410EPA
TC1410NCOA
TC1410NCPA
TC1410NEOA
TC1410NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
TC1410
INVERTING
OUTPUTS
VDD
2
3
4
5
6
INPUT
4.7V
300mV
NONINVERTING
OUTPUTS
TC1410N
OUTPUT
7
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
TC1410/N-8 10/15/96
4-183
8
1 page  
0.5A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 500pF
100
80
60 TA = 85°C
40 TA = 25°C
20 TA = –40°C
0
4 6 8 10 12 14 16
VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
80
60 TA = 85°C
TA = 25°C
40
TA = –40°C
20
0
4 6 8 10 12 14 16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
100
TRISE
80
TFALL
60
40
20
0
0 500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
1
TC1410
TC1410N
Fall Time vs. Supply Voltage
CLOAD = 500pF
100
2
80
60
TA = 85°C
40
TA = 25°C
20
TA = –40°C
0
4 6 8 10 12 14 16
VDD (VOLTS)
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 500pF
100
3
4
80
560
TA = 85°C
TA = 25°C
40
20 TA = –40°C
0
4 6 8 10 12 14 16
VDD (VOLTS)
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
45
TD2
41
TD1
37
6
7
33
29
25
0 500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
8
4-187
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TC1410.PDF ] | |
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