|
|
PDF TIM1011-2L Data sheet ( Hoja de datos )
| Número de pieza | TIM1011-2L | |
| Descripción | MICROWAVE POWER GaAs FET | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TIM1011-2L (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
TOSHIBA
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-2L
FEATURES
HIGH POWER
P1dB=33.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P1dB
CONDITION
G1dB
IDS1
ηadd
IM3
IDS2
∆Tch
VDS= 9V
f =10.7-11.7GHz
Two Tone Test
P=22dBm
(Single Carrier Level)
VDS X IDS X Rth(c-c)
MIN.
32.5
6.5
-42
TYP. MAX. UNIT
33.5 dBm
7.5 dB
0.85
24
-45
1.1
A
%
dBc
0.85 1.1
80
A
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITION
gm VDS= 3V
IDS=1.0A
VGSoff VDS= 3V
IDS= 30mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -30µA
MIN. TYP. MAX. UNIT
600 mS
-2.0 -3.5 -5.0 V
2.0 2.6 A
-5
V
Rth(c-c) Channel to Case
5.0 6.0 °C/W
♦The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TOSHIBA CORPORATION
Apr. 2000
1 page  
VDS=9V, IDS=1.0A
TIM11011-2L S-PARAMETERS
(MAGN. and ANGLES)
TIM1011-2L
f=10.4 – 13.2GHz
FREQUENCY
(GHz)
S11
MAG ANG
S21
MAG ANG
S12
MAG ANG
S22
MAG
ANG
10.4
0.76 148 2.49 -85 0.066 -139 0.55
121
10.8
0.54 110 2.98 -131 0.110 176 0.46
62
11.2
0.25 50 3.12 180 0.145 129 0.38
-9
11.6
0.16 -63 2.84 132 0.153 84 0.36
-67
12.0 0.26 -123 2.55 89 0.155 43 0.37 -103
12.4
0.30 -164 2.37
46 0.158
3
0.34 -130
12.8
0.34 142 2.30
-1
0.164
-42
0.22
-146
13.2
0.49 58 2.05 -61 0.154 -100 0.18
-48
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TIM1011-2L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TIM1011-2L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |