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PDF LM2747 Data sheet ( Hoja de datos )

Número de pieza LM2747
Descripción Synchronous Buck Controller
Fabricantes National Semiconductor 
Logotipo National Semiconductor Logotipo



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No Preview Available ! LM2747 Hoja de datos, Descripción, Manual

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March 2006
LM2747
Synchronous Buck Controller with Pre-bias Startup, and
Optional Clock Synchronization
General Description
The LM2747 is a high-speed synchronous buck regulator
controller with a feedback voltage accuracy of ±1%. It can
provide simple down conversion to output voltages as low as
0.6V. Though the control section of the IC is rated for 3 to 6V,
the driver section is designed to accept input supply rails as
high as 14V. The use of adaptive non-overlapping MOSFET
gate drivers helps avoid potential shoot-through problems
while maintaining high efficiency. The IC is designed for the
more cost-effective option of driving only N-channel MOS-
FETs in both the high-side and low-side positions. It senses
the low-side switch voltage drop for providing a simple,
adjustable current limit.
The LM2747 features a fixed-frequency voltage-mode PWM
control architecture which is adjustable from 50 kHz to 1
MHz with one external resistor. In addition, the LM2747 also
allows the switching frequency to be synchronized to an
external clock signal over the range of 250 kHz to 1 MHz.
This wide range of switching frequency gives the power
supply designer the flexibility to make better tradeoffs be-
tween component size, cost and efficiency.
Features include the ability to startup with a pre-biased load
on the output, soft-start, input undervoltage lockout (UVLO)
and Power Good (based on both undervoltage and overvolt-
age detection). In addition, the shutdown pin of the IC can be
used for providing startup delay, and the soft-start pin can be
used for implementing precise tracking, for the purpose of
sequencing with respect to an external rail.
Features
n ±1% feedback voltage accuracy over temperature
n Switching frequency from 50 kHz to 1 MHz
n Switching frequency synchronize range 250 kHz to 1
MHz
n Startup with a pre-biased output load
n Power stage input voltage from 1V to 14V
n Control stage input voltage from 3V to 6V
n Output voltage adjustable down to 0.6V
n Power Good flag and shutdown
n Output overvoltage and undervoltage detection
n Low-side adjustable current sensing
n Adjustable soft-start
n Tracking and sequencing with shutdown and soft start
pins
n TSSOP-14 package
Applications
n Down Conversion from 3.3V
n Cable Modem, DSL and ADSL
n Laser Jet and Ink Jet Printers
n Low Voltage Power Modules
n DSP, ASIC, Core and I/O
Typical Application
© 2006 National Semiconductor Corporation DS201509
20150901
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LM2747 pdf
Typical Performance Characteristics
Efficiency (VOUT = 1.2V)
VCC = 3.3V, fSW = 1 MHz
Internal Reference Voltage vs Temperature
20150940
Frequency vs Temperature
20150958
Output Voltage vs Output Current
20150960
Switch Waveforms
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 3A, CSS = 12 nF, fSW = 1 MHz
20150956
Start-Up (Full-Load)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 3A, CSS = 12 nF, fSW = 1 MHz
20150946
5
20150948
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LM2747 arduino
Application Information (Continued)
For example, if the master supply output voltage slew rate
was 1V/ms and the desired delay time between the startup
of the master supply and LM2747 output voltage was 5 ms,
then the desired SD pin slew rate would be (1.08V/5 ms) =
0.216V/ms. Due to the internal impedance of the SD pin, the
maximum recommended value for RS2 is 1 k. To achieve
the desired slew rate, RS1 would then be 274. A timing
diagram for this example is shown in Figure 7.
FIGURE 7. Delay for Sequencing
20150911
SD PIN IMPEDANCE
When connecting a resistor divider to the SD pin of the
LM2747 some care has to be taken. Once the SD voltage
goes above VSD-IH, a 17 µA pull-up current is activated as
shown in Figure 8. This current is used to create the internal
hysteresis ()170 mV); however, high external impedances
will affect the SD pin logic thresholds as well. The external
impedance used for the sequencing divider network should
preferably be a small fraction of the impedance of the SD pin
for good performance (around 1 k).
FIGURE 8. SD Pin Logic
20150906
MOSFET GATE DRIVERS
The LM2747 has two gate drivers designed for driving
N-channel MOSFETs in a synchronous mode. Note that
unlike most other synchronous controllers, the bootstrap
capacitor of the LM2747 provides power not only to the
driver of the upper MOSFET, but the lower MOSFET driver
too (both drivers are ground referenced, i.e. no floating
driver).
Two things must be kept in mind here. First, the BOOT pin
has an absolute maximum rating of 18V. This must never be
exceeded, even momentarily. Since the bootstrap capacitor
is connected to the SW node, the peak voltage impressed on
the BOOT pin is the sum of the input voltage (VIN) plus the
voltage across the bootstrap capacitor (ignoring any forward
drop across the bootstrap diode). The bootstrap capacitor is
charged up by a given rail (called VBOOT_DC here) whenever
the upper MOSFET turns off. This rail can be the same as
VCC or it can be any external ground-referenced DC rail. But
care has to be exercised when choosing this bootstrap DC
rail that the BOOT pin is not damaged. For example, if the
desired maximum VIN is 14V, and VBOOT_DC is chosen to be
the same as VCC, then clearly if the VCC rail is 6V, the peak
voltage on the BOOT pin is 14V + 6V = 20V. This is unac-
ceptable, as it is in excess of the rating of the BOOT pin. A
VCC of 3V would be acceptable in this case. Or the VIN range
must be reduced accordingly. There is also the option of
deriving the bootstrap DC rail from another 3V external rail,
independent of VCC.
The second thing to be kept in mind here is that the output of
the low-side driver swings between the bootstrap DC rail
level of VBOOT_DC and Ground, whereas the output of the
high-side driver swings between VIN+ VBOOT_DC and
Ground. To keep the high-side MOSFET fully on when de-
sired, the Gate pin voltage of the MOSFET must be higher
than its instantaneous Source pin voltage by an amount
equal to the ’Miller plateau’. It can be shown that this plateau
is equal to the threshold voltage of the chosen MOSFET plus
a small amount equal to Io/g. Here Io is the maximum load
current of the application, and g is the transconductance of
this MOSFET (typically about 100 for logic-level devices).
That means we must choose VBOOT_DC to at least exceed
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