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PDF IRHY9130CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY9130CM | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 91400C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY9130CM
JANSR2N7382
100V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY9130CM 100K Rads (Si)
IRHY93130CM 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID
-11A
-11A
QPL Part Number
JANSR2N7382
JANSF2N7382
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-11
-7.0 A
-44
75 W
0.6 W/°C
±20 V
150 mJ
-11 A
7.5 mJ
-16
-55 to 150
V/ns
oC
300 (0.063 in (1.6mm)from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
06/13/02
1 page  
Pre-Irradiation
IRHY9130CM, JANSR2N7382
2000
1500
1000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500
Crss
0
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -11A
16
12
VDS =-80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100us
10
1ms
TC = 25°C
TJ = 150° C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHY9130CM.PDF ] | |
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