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PDF IRHY8230CM Data sheet ( Hoja de datos )

Número de pieza IRHY8230CM
Descripción RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricantes International Rectifier 
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PD - 91273C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
REF:MIL-PRF-19500/614
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number
IRHY7230CM
IRHY3230CM
IRHY4230CM
IRHY8230CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.40
0.40
0.40
0.40
ID
9.4A
9.4A
9.4A
9.4A
QPL Part Number
JANSR2N7381
JANSF227381
JANSG2N7381
JANSH2N7381
TO-257AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
9.4
6.0 A
37
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
150
5.5
7.5
16
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/17/01

1 page




IRHY8230CM pdf
Pre-Irradiation
IRHY7230CM
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 9.4A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8
-VSD ,Source-to-Drain Voltage (V)
2.2
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10 100us
1ms
1 10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5

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