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PDF IRHY57133CMSE Data sheet ( Hoja de datos )
| Número de pieza | IRHY57133CMSE | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 94318C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
Radiation Level
IRHY57133CMSE 100K Rads (Si)
RDS(on)
0.09Ω
IRHY57133CMSE
JANSR2N7488T3
130V, N-CHANNEL
REF: MIL-PRF-19500/705
5 TECHNOLOGY
ID QPL Part Number
18A* JANSR2N7488T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
18*
12 A
72
75 W
0.6 W/°C
±20 V
80 mJ
18 A
7.5 mJ
8.0
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10sec)
4.3(Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/10/04
1 page  
Pre-Irradiation
IRHY57133CMSE, JANSR2N7488T3
2000
1600
1200
800
VCCGirsssSs
=
=
=
0V,
CCggsd
+
f = 1MHz
Cgd , Cds
SHORTED
Coss = Cds + Cgd
Ciss
Coss
400 Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 18A
16
12
VVVDDDSSS
=
=
=
104V
65V
26V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1 TJ = 25°C
0.1
0.2
VGS = 0V
0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHY57133CMSE.PDF ] | |
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