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PDF IRHMK597160 Data sheet ( Hoja de datos )

Número de pieza IRHMK597160
Descripción RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricantes International Rectifier 
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PD-96912
RADIATION HARDENED
IRHMK597160
POWER MOSFET
100V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHMK597160 100K Rads (Si)
IRHMK593160 300K Rads (Si)
RDS(on)
0.05
0.05
ID
-45A*
-45A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
TO-254AA Tabless
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pack. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
-45*
-30
-180
208
1.67
±20
480
-45
20.8
-6.0
-55 to 150
300 (for 5s)
3.7 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04

1 page




IRHMK597160 pdf
Pre-Irradiation
IRHMK597160
10000
8000
6000
4000
VGS = 0V, f = 1MHz
CCirssss
=
=
CCggsd
+
Cgd
,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
Coss
2000
0
1
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -45A
16
12
VVDDSS
=
=
-80V
-50V
VDS =-20V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10 TJ = 25 ° C
1
0.1
0.0
VGS = 0 V
1.5 3.0 4.5
-VSD ,Source-to-Drain Voltage (V)
6.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

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