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Número de pieza NTHD5902T1
Descripción Power MOSFET Dual N Channel ChipFET
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NTHD5902T1
Power MOSFET
Dual N−Channel ChipFETE
2.9 Amps, 30 Volts
Features
Low RDS(on) for Higher Efficiency
Miniature ChipFET Surface Mount Package Saves Board Space
Applications
Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
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DUAL NCHANNEL
2.9 AMPS, 30 VOLTS
RDS(on) = 85 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
DrainSource Voltage
GateSource Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS
VGS
ID
30
"20
"3.9
"2.8
"2.9
"2.1
IDM "10
IS 1.8 0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
2.1 1.1
1.1 0.6
55 to +150
1. Surface Mounted on 1x 1FR4 Board.
Unit
V
V
A
A
A
W
°C
D1 D2
G1 G2
S1
NChannel MOSFET
S2
NChannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A6 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5902T1 ChipFET
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
NTHD5902T1/D

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NTHD5902T1 pdf
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NTHD5902T1
TYPICAL ELECTRICAL CHARACTERISTICS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
Notes: PDM
t1
t2
1.
2.
Duty Cycle, D
Per Unit Base
=
=
t1
Rt t2hJA
=
90°C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
103
102
10 1
1
10
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance, JunctiontoAmbient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
10 1
1
Square Wave Pulse Duration (sec)
Figure 12. Normalized Thermal Transient Impedance, JunctiontoFoot
10
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