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PDF IRGB4055PBF Data sheet ( Hoja de datos )

Número de pieza IRGB4055PBF
Descripción PDP TRENCH IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGB4055PBF Hoja de datos, Descripción, Manual

PD - 97058B
PDP TRENCH IGBT IRGB4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
IRGS4055PbF
Key Parameters
VCE min
300
cV CE(ON) typ. @ 110A
IRP max @ TC= 25°C
TJ max
1.70
270
150
V
V
A
°C
C CC
G
E
n-channel
GCE
TO-220
IRGB4055DPbF
GCE
D2Pak
IRGS4055DPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes
advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area
which improve panel efficiency. Additional features are 150°C operating junction temperature and high
repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust
and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
dJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
dJunction-to-Ambient, TO-220
dJunction-to-Ambient (PCB Mount) , D2Pak
www.irf.com
Max.
±30
f110
60
270
255
102
2.04
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
03/16/07

1 page




IRGB4055PBF pdf
IRGB/S4055PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
10
0
50 100 150 200
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
16
IC = 35A
14
12
10
200V
240V
8
6
4
2
0
0 25 50 75 100 125 150
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.00773
0.05408
τi (sec)
0.000009
0.000120
τ4τ4 0.23564 0.002452
CiC= iτi/Ri/iRi
0.20216 0.022464
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
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