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Número de pieza | FDPF55N06 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
• 55A, 60V, RDS(on) = 0.022 Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP55N06
FDPF55N06
60
55 55 *
34.8 34.8 *
220 220 *
± 25
480
55
11.4
4.5
114 48
0.9 0.4
-55 to +150
300
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
1
www.fairchildsemi.com
1 page www.DataSheet4U.com
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
1. Z? JC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
1 0 -5
1 0 -4
10-3
10-2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
D = 0 .5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
10-2 single pulse
* Notes :
1. Z? JC(t) = 2.58 oC /W M ax.
2. Duty Factor, D=t1/t2
3. T JM - T C = PDM * Z? JC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
FDP55N06/FDPF55N06 Rev. A
5
www.fairchildsemi.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet FDPF55N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDPF55N06 | N-Channel MOSFET | Fairchild Semiconductor |
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