DataSheet.es    


PDF FDPF55N06 Data sheet ( Hoja de datos )

Número de pieza FDPF55N06
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de FDPF55N06 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! FDPF55N06 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
• 55A, 60V, RDS(on) = 0.022 @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP55N06
FDPF55N06
60
55 55 *
34.8 34.8 *
220 220 *
± 25
480
55
11.4
4.5
114 48
0.9 0.4
-55 to +150
300
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
1
www.fairchildsemi.com

1 page




FDPF55N06 pdf
www.DataSheet4U.com
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
1. Z? JC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
1 0 -5
1 0 -4
10-3
10-2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
D = 0 .5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
10-2 single pulse
* Notes :
1. Z? JC(t) = 2.58 oC /W M ax.
2. Duty Factor, D=t1/t2
3. T JM - T C = PDM * Z? JC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, Square W ave Pulse Duration [sec]
101
FDP55N06/FDPF55N06 Rev. A
5
www.fairchildsemi.com

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet FDPF55N06.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
FDPF55N06N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar