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PDF IRF1404ZSPBF Data sheet ( Hoja de datos )

Número de pieza IRF1404ZSPBF
Descripción AUTOMOTIVE MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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AUTOMOTIVE MOSFET
PD - 96040
IRF1404ZPbF
IRF1404ZSPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
IRF1404ZLPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7m
G
ID = 75A
S
TO-220AB
D2Pak
TO-262
IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
180
120
75
710
200
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
1.3
± 20
330
480
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
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Typ.
–––
0.50
–––
–––
kMax.
0.75
–––
62
40
Units
°C/W
1
01/03/06

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IRF1404ZSPBF pdf
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IRF1404Z/S/LPbF
200
LIMITED BY PACKAGE
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF1404ZSPBF arduino
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IRF1404Z/S/LPbF
TO-262 Package Outline ( Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S E MBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INT E RNAT IONAL
RE CTIFIER
LOGO
AS S EMBLY
LOT CODE
OR
INT E RNAT IONAL
RE CT IFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DATE CODE
YEAR 7 = 1997
WE EK 19
LINE C
PART NUMBER
DATE CODE
P = DES IGNATES LEAD-FRE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WE EK 19
A = AS S EMBLY S IT E CODE
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