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PDF IRF4000 Data sheet ( Hoja de datos )

Número de pieza IRF4000
Descripción IEEE 802.3af Compliant PoE Switch
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF4000 Hoja de datos, Descripción, Manual

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Applications
l IEEE 802.3af Compliant PoE Switch
in Power Sourcing Equipment
Features
l Exceeds IEEE 802.3af PoE
requirements
l Rugged planar technology with large
SOA
l Very Low Leakage at 100V (1.5µA max)
l Fully characterized avalanche voltage
and current
l Thermally enhanced
l Saves space: replaces 4 discrete
MOSFETs
PD - 97056
IRF4000
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
::100V
270m
350m
@VGS = 12V
@VGS = 10V
2.4A
' ' ' '
* 6 * 6 * 6 * 6
5mm x 10mm Power MLP
IRF4000 ISOMETRIC
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
dv/dt
TJ
TSTG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
100
± 30
2.4
1.9
19
3.5
0.028
8.6
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.5
36
Units
°C/W
Notes  through … are on page 7
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1
10/07/05

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IRF4000 pdf
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IRF4000
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= τi/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
R5R5
Ri (°C/W) τi (sec)
1.131389 0.000036
τAτA 1.543054 0.000865
τ4 τ4
τ5τ5
9.712817 0.071341
12.93983
2.715
10.6812
67
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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