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PDF S7C4F30L Data sheet ( Hoja de datos )

Número de pieza S7C4F30L
Descripción STS7C4F30L
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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S7C4F30L Hoja de datos, Descripción, Manual
STS7C4F30L
N-CHANNEL 30V - 0.018 - 7A SO-8
P-CHANNEL 30V - 0.070 - 4A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS RDS(on)
ID
STS7C4F30L(N-Channel) 30 V <0.022 7 A
www.DataSheet4U.cSoTmS7C4F30L(P-Channel) 30 V <0.080 4 A
s TYPICAL RDS(on) (N-Channel) = 0.018
s TYPICAL RDS(on) (P-Channel) = 0.070
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC/DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
N-CHANNEL
P-CHANNEL
Unit
VDS Drain-source Voltage (VGS = 0)
30 30 V
VDGR
Drain-gate Voltage (RGS = 20 k)
30 30 V
VGS Gate- source Voltage
± 20
± 20
V
ID
Drain Current (continuos) at TC = 25°C
Single Operating
7 4A
ID
Drain Current (continuos) at TC = 100°C
Single Operating
4.4 2.5 A
IDM(•)
Drain Current (pulsed)
28 16 A
Ptot
Total Dissipation at TC = 25°C Dual Operating
Total Dissipation at TC = 25°C Single Operating
1.6
2
W
W
Tstg Storage Temperature
-60 to 150
°C
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
150 °C
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
June 2001
.
1/10

1 page

S7C4F30L pdf
Gate Charge vs Gate-source Voltage n-ch
Capacitance Variations n-ch
STS7C4F30L
www.DataSheet4U.com
Normalized Gate Threshold Voltage vs Temperature n-ch
Normalized on Resistance vs Temperature n-ch
Source-drain Diode Forward Characteristics n-ch
5/10

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