DataSheet.es    


PDF T221160A Data sheet ( Hoja de datos )

Número de pieza T221160A
Descripción 64K x 16 DYNAMIC RAM FAST PAGE MODE
Fabricantes Taiwan Memory Technology 
Logotipo Taiwan Memory Technology Logotipo



Hay una vista previa y un enlace de descarga de T221160A (archivo pdf) en la parte inferior de esta página.


Total 14 Páginas

No Preview Available ! T221160A Hoja de datos, Descripción, Manual

www.DataSheet4U.com
tm TE
CH
DRAM
T221160A
64K x 16 DYNAMIC RAM
FAST PAGE MODE
FEATURES
High speed access time : 25/30/35/40 ns
Industry-standard x 16 pinouts and timing
functions.
Single 5V (±10%) power supply.
All device pins are TTL- compatible.
256-cycle refresh in 4ms.
Refresh modes: RAS only, CAS BEFORE
RAS (CBR) and HIDDEN.
Conventional FAST PAGE MODE access cycle.
BYTE WRITE and BYTE READ access cycles.
PART NUMBER EXAMPLES
PART NUMBER ACCESS TIME PACKAGE
T221160A-30J
30ns
SOJ
T221160A-30S
T221160A-35J
T221160A-35S
30ns
35ns
35ns
TSOP-II
SOJ
TSOP-II
GENERAL DESCRIPTION
The T221160A is a randomly accessed solid state
memory containing 1,048,551 bits organized in a
x16 configuration. The T221160A has both BYTE
WRITE and WORD WRITE access cycles via two
CAS pins. It offers Fast Page mode operation
The T221160A CAS function and timing are
determined by the first CAS to transition low and
by the last to transition back high. Use only one of
the two CAS and leave the other staying high
during WRITE will result in a BYTE WRITE.
CASL transiting low in a WRITE cycle will write
data into the lower byte (IO1~IO8), and CASH
transiting low will write data into the upper byte
(IO9~16).
PIN ASSIGNMENT ( Top View )
Vcc
I/01
I/02
I/03
I/04
Vcc
I/05
I/06
I/07
I/08
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
SOJ
40 Vss
39 I/016
38 I/015
37 I/014
36 I/013
35 Vss
34 I/012
33 I/011
32 I/010
31 I/09
30 NC
29 CASL
28 CASH
27 OE
26 NC
25 A7
24 A6
23 A5
22 A4
21 VSS
Vcc 1
I/01 2
I/02 3
I/03 4
I/04 5
Vcc 6
I/05 7
I/06 8
I/07 9
I/08 10
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
11
12
13
14
15
16
17
18
19
20
T S O P (II)
40 Vss
39 I/016
38 I/015
37 I/014
36 I/013
35 Vss
34 I/012
33 I/011
32 I/010
31 I/09
30 NC
29 CASL
28 CASH
27 OE
26 NC
25 A7
24 A6
23 A5
22 A4
21 VSS
Taiwan Memory Technology, Inc. reserves the right P. 1
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
DataSheet4 U .com

1 page




T221160A pdf
www.DataSheet4U.com
tm TE
CH
T221160A
AC CHARACTERISTICS (note 1,2,3) (Ta = 0 to 70°C)
AC TEST CONDITIONS:
Vcc=5V ±10%, input pulse level = 0 to 3V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS
PARAMETER
SYM
-25
-30
-35
-40 UNIT Notes
MIN MAX MIN MAX MIN MAX MIN MAX
Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
Access Time From CAS Precharge
RAS Pulse Width
RAS Pulse Width
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
CAS Hold Time
CAS Precharge Time
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS )
tRC 43 55 65 75 ns
tRWC 65 85 95 105 ns
tPC 15 20 23 25 ns
tPCM 37 42 49 52 ns
tRAC 25 30 35 40 ns 4
tCAC
7
8
9 10 ns 5
tOAC
7
8
9 10 ns 13
tAA 12 16 18 20 ns 8
tACP 14 18 20 22 ns
tRAS 25 10K 30 10K 35 10K 40 10K ns
tRASC 25 100K 30 100K 35 100K 40 100K ns
tRSH 7 8 9 10 ns
tRP 15 20 23 25 ns
tCAS 4 10K 6 10K 8 10K 10 10K ns
tCSH 21 26 30 35 ns
tCP 3 3 4 5 ns
tRCD 10 17 10 21 10 25 10 29 ns 7
tCRP 3 3 3 5 ns
tASR 0 0 0 0 ns
tRAH 5 5 5 5 ns
tRAD 8 13 8 14 8 16 8 18 ns 8
tASC 0 0 0 0 ns
tCAH 4 4 4 5 ns
ns
tAR 22 26 30 34
Column Address to RAS Lead Time
tRAL 12 14 16 18 ns
Read Command Setup Time
tRCS 0 0 0 0 ns 14
Read Command Hold Time Reference to CAS tRCH 0 0 0 0 ns 9,14
Read Command Hold Time Reference to RAS tRRH 0 0 0 0 ns 9
CAS to Output in Low-Z
tCLZ 3 3 3 3 ns
Output Buffer Turn-off Delay From CAS or
RAS
ns 10,16
tOFF1 3 15 3 15 3 15 3 15
Taiwan Memory Technology, Inc. reserves the right P. 5
to change products or specifications without notice.
DataSheet4 U .com
Publication Date: FEB. 2002
Revision:A

5 Page





T221160A arduino
www.DataSheet4U.com
tm TE
CH
T221160A
FAST-PAGE-MODE READ-EARLY-WRITE CYCLE
(Pseudo READ-MODIFY-WRITE)
tR A S C
tR P
V IH
R A S V IL
V IH
C A S V IL
tC R P
tC S H
tR C D
tC A S
tP C
tC P
tP C
tC A S
tC P
tR S H
tC A S
tA S R
tA R
tR A D
tR A H
tA S C
tC A H
tA SC tC A H
tA S C
tR A L
tC A H
tC R P
tC P
V IH
A D D R V IL
V IH
W E V IL
V IO H
I/O V IO L
ROW
CO LUM N
tR C S
CO LUM N
tR C H
CO LUM N
tW C S
tW C H
tA A
tR A C
OPE
N
tC A C
tO A C
tA C P
tO F F 1
V A IL D
D A T A (A )
tA A
tC A C
tC L Z
tO F F 1
V A IL D
D A T A (B )
tD S tD H
V A IL D
D A T A IN
ROW
V IH
O E V IL
VIH
RAS VIL
VIH
CAS VIL
VIH
ADDR VIL
VOH
I/O VOL
RAS ONLY REFRESH CYCLE
(ADDR=A0-A7 ; OE , WE =DON‘T CARE)
tRAS
tRC
tRP
tCRP
tRPC
tASR
tRAH
ROW
tOFF
OPEN
Note1:Do not drive data prior to tristate.
ROW
DON'T CARE
UNDEFINED
Taiwan Memory Technology, Inc. reserves the right P. 11
to change products or specifications without notice.
DataSheet4 U .com
Publication Date:FEB. 2002
Revision:A

11 Page







PáginasTotal 14 Páginas
PDF Descargar[ Datasheet T221160A.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
T221160A64K x 16 DYNAMIC RAM FAST PAGE MODETaiwan Memory Technology
Taiwan Memory Technology

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar