DataSheet.es    


PDF XP04111 Data sheet ( Hoja de datos )

Número de pieza XP04111
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de XP04111 (archivo pdf) en la parte inferior de esta página.


Total 3 Páginas

No Preview Available ! XP04111 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
Composite Transistors
XP04111 (XP4111)
Silicon PNP epitaxial planar type
For switching/digital circuits
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2111 (UN2111) × 2
0.2±0.05
65
4
1 23
(0.65) (0.65)
1.3±0.1
2.0±0.1
10˚
Unit: mm
0.12+–00..0025
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
150
150
55 to +150
Unit
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-88
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Marking Symbol: 9U
Internal Connection
65
4
Tr1
Tr2
Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.5 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
35
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
DataSheet4 U .com
Note) The part number in the parenthesis shows conventional part number.
SJJ00161BED
1

1 page





PáginasTotal 3 Páginas
PDF Descargar[ Datasheet XP04111.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
XP04111Silicon PNP Epitaxial TransistorPanasonic Semiconductor
Panasonic Semiconductor
XP04113Silicon PNP Epitaxial TransistorPanasonic Semiconductor
Panasonic Semiconductor
XP04115Silicon PNP epitaxial planer transistorPanasonic Semiconductor
Panasonic Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar