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PDF IRG4MC50F Data sheet ( Hoja de datos )
| Número de pieza | IRG4MC50F | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD -94274A
INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC50F
Fast Speed IGBT
Features
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
• Switching-loss rating includes all "tail" losses
• Ceramic eyelets
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 600V
VCE(on) max = 2.0V
@VGE = 15V, IC = 30A
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
35*
30
140
140
± 20
150
60
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
RthJC
Junction-to-Case
* Current is limited by internal wire diameter
www.irf.com
Min Typ Max Units
— — 0.83 °C/W
Test Conditions
1
02/08/02
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1 page  
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8000
6000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4MC50F
20 VCC = 4800V
I C = 30A
16
12
8
4
0
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.00
VCC= 480V
VGE = 15V
TJ = 25°C
I C= 30A
2.50
100
RG = 2.35Ω
VGE = 15V
VCC= 480V
10
1
IC = 60A
IC = 30A
IC = 20A
2.00
0
10 20 30 40
RG, Gate Resistance ( Ω)
50
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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| PDF Descargar | [ Datasheet IRG4MC50F.PDF ] | |
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