|
|
PDF FDFMC2P120 Data sheet ( Hoja de datos )
| Número de pieza | FDFMC2P120 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDFMC2P120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
July 2005
FDFMC2P120
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
FDFMC2P120 combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
• Buck Boost
Features
• –2 A, –20 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
RDS(ON) = 200 mΩ @ VGS = –2.5 V
• Low Profile – 0.8mm maximum – in the new package
MicroFET 3x3 mm
PIN 1 2 3
NC 1
TO BOTTOM
6A
S2
5A
TOP
6
MLP 3x3
54
BOTTOM
S3
4G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
VRRM
IO
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note a)
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2P120
FDFMC2P120
7’’
Ratings
–20
±12
–3.5
–10
20
2
2.4
1.2
–55 to +150
60
145
Tape width
12mm
Units
V
V
A
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDFMC2P120 Rev.E (W)
DataSheet4 U .com
1 page  
www.DataSheet4U.com
Typical Characteristics
5
ID = -3.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
500
400
300
Ciss
f = 1MHz
VGS = 0 V
200
100
Crss
0
0
Coss
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
0.1
0.01
0.001
0.0001
0.00001
0.000001
0
TJ = 125oC
TJ = 100oC
TJ = 25oC
5 10 15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current .
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA =145 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFMC2P120 Rev.E (W)
DataSheet4 U .com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDFMC2P120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDFMC2P120 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |