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PDF FDFMA3N109 Data sheet ( Hoja de datos )
| Número de pieza | FDFMA3N109 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
May 2006
FDFMA3N109
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
PIN 1
A NC D
KD
Features
MOSFET:
• 2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V
RDS(ON) = 140 mΩ @ VGS = 3.0 V
RDS(ON) = 163 mΩ @ VGS = 2.5 V
Schottky:
• VF < 0.46 V @ 500mA
• Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
• RoHS Compliant
A1
NC 2
6K
5G
KGS
MicroFET 2x2
D3
4S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
VRRM
IO
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC = 25°C, VGS = 4.5V)
– Continuous (TC = 25°C, VGS = 2.5V)
– Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
Ratings
30
±12
2.9
2.7
10
1.5
0.65
–55 to +150
28
1
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
193
101
228
Package Marking and Ordering Information
Device Marking
Device
Reel Size
109
FDFMA3N109
7’’
Tape width
8mm
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDFMA3N109 Rev B(W)
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Typical Characteristics
10
ID = 2.9A
8
6
4
VDS = 10V
20V
15V
2
0
0123456
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
1
TJ = 125oC
0.1
TJ = 25oC
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
300
f = 1MHz
VGS = 0 V
250
200
Ciss
150
100
50
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
0.1
0.01
TJ = 125oC
0.001
0.0001
TJ = 100oC
0.00001
0.000001
0
TJ = 25oC
5 10 15 20
VR, REVERSE VOLTAGE (V)
25
30
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA =193°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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FDFMA3N109 Rev B(W)
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