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PDF FDFMA2P853 Data sheet ( Hoja de datos )
| Número de pieza | FDFMA2P853 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
August 2005
FDFMA2P853
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
-3.0 A, -20V. RDS(ON) = 120 mΩ @ VGS = -4.5 V
RDS(ON) = 160 mΩ @ VGS = -2.5 V
RDS(ON) = 240 mΩ @ VGS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
PIN A
C
VF < 0.46 V @ 500 mA
NC D
A1
D NC 2
6C
5G
D3
MicroFET C G S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
VRRM
IO
PD
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
Tape Width
8mm
4S
Ratings
-20
±8
-2.2
-6
20
1
1.4
0.7
-55 to +150
Units
V
V
A
V
A
W
oC
86
173 oC/W
86
140
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFMA2P853 Rev. C (W)
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Typical Characteristics
5
ID = -3.0A
4
3
2
VDS = -5V
-15V
-10V
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5
700
600
500
400
300
200
100
Crss
0
0
Coss
Ciss
f = 1MHz
VGS = 0 V
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
10
1
TJ = 125oC
0.1
0.01
TJ = 25oC
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
0.01
0.001
0.0001
TJ = 125oC
TJ = 85oC
0.00001
0.000001
0
TJ = 25oC
5 10 15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current
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Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5 FDFMA2P853 Rev. C (W)
5 Page | ||
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