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PDF FDFM2P110 Data sheet ( Hoja de datos )
| Número de pieza | FDFM2P110 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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April 2005
FDFM2P110
Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
Features
■ –3.5 A, –20 V RDS(ON) = 140 mΩ @ VGS = –4.5 V
RDS(ON) = 200 mΩ @ VGS = –2.5 V
■ Low Profile – 0.8mm maximum – in the new package
MicroFET 3x3 mm
Applications
■ DC-DC Converter
General Description
FDFM2P110 combines the exceptional performance of Fairchild’s
PowerTrench MOSFET technology with a very low forward voltage
drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance.
Pin 1
1
2
Top
MLP 3x3
Bottom
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
VRRM
IO
PD
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.5
–10
20
2
2.4
1.2
–55 to +150
60
145
Package Marking and Ordering Information
Device Marking
2P110
Device
FDFM2P110
Reel Size
7"
Tape width
12mm
6
5
4
Units
V
V
A
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDFM2P110 Rev. C2
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Typical Characteristics
5
ID = -3.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
TJ = 125° C
1
0.1
TJ = 25° C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
500
400
Ciss
300
f = 1MHz
VGS = 0 V
200
Coss
100
Crss
0
0
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
0.1
0.01
TJ = 125° C
0.001
0.0001
TJ = 100° C
0.00001
TJ = 25° C
0.000001
0
5 10 15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
R JA(t) = r(t) * R JA
R JA =145 °C/W
P(pk)
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFM2P110 Rev. C2
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDFM2P110.PDF ] | |
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