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PDF FDFM2N111 Data sheet ( Hoja de datos )

Número de pieza FDFM2N111
Descripción Integrated N-Channel PowerTrench MOSFET and Schottky Diode
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDFM2N111 Hoja de datos, Descripción, Manual

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August 2005
FDFM2N111
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
Applications
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
„ Standard Buck Converter
Features
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
PIN 1
A
„ 4 A, 20 V RDS(ON) = 100m@ VGS = 4.5 V
RDS(ON) = 150m@ VGS = 2.5 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
S/C G
CD
A1
S/C 2
6A
5 S/C
G3
4D
A S/C D
TOP
MLP 3x3
BOTTOM
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
VRRM
IO
PD
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
Power dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Ratings
20
±12
4
10
20
2
1.7
0.8
-55 to +150
70
150
Units
V
V
A
V
A
W
oC
oC/W
oC/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFM2N111 Rev. C2 (W)
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FDFM2N111 pdf
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Typical Characteristics
6
ID = 4A
5
4
VDS = 5V
10V
15V
3
2
1
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
400
350
300
Ciss
f = 1MHz
VGS = 0 V
250
200
150
Coss
100
50
Crss
0
0
4 8 12 16
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
0.1
0.01
TJ = 125oC
0.001
0.0001
0.00001
TJ = 100oC
TJ = 25oC
0.000001
0
5 10 15
VR, REVERSE VOLTAGE (V)
20
Figure 10. Schottky Diode Reverse Current
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Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5 FDFM2N111 Rev. C2(W)

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