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PDF EFA080A Data sheet ( Hoja de datos )
| Número de pieza | EFA080A | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execelies | |
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Excelics
EFA080A
DATA SHEET
Low Distortion GaAs Power FET
• +26.0dBm TYPICAL OUTPUT POWER
• 10.0dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE
40
510
50 116
DD
S GSG S
95 50 80
48
340
100
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=8V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
24.0 26.0
26.0
8.0 10.0
7.5
35
dBm
dB
%
Idss Saturated Drain Current Vds=3V, Vgs=0V
130 210 300 mA
Gm
Transconductance
Vds=3V, Vgs=0V
90 120
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.0mA
-12 -15
V
BVgs
Rth
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-7 -14
55
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids Drain Current
Idss
260mA
Igsf
Forward Gate Current
20mA
4mA
Pin Input Power
25dBm
Tch
Channel Temperature
175oC
Tstg Storage Temperature -65/175oC
@ 3dB Compression
150oC
-65/150oC
Pt
Total Power Dissipation
2.5 W
2.1 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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