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PDF IRFZ24N Data sheet ( Hoja de datos )
| Número de pieza | IRFZ24N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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1. IRFZ24N transistor mosfet  Hay una vista previa y un enlace de descarga de IRFZ24N (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 91354A
IRFZ24N
D
VDSS = 55V
G RDS(on) = 0.07Ω
S ID = 17A
TO-220AB
Max.
17
12
68
45
0.30
±20
71
10
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
3.3
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
9/13/99
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1 page  
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20
16
12
8
4
0A
25 50 75 100 125 150 175
TC , C ase Tem perature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRFZ24N
RD
D.U.T.
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.5 0
1
0 .2 0
0 .1 0
0.05
0.02
0.01
0.1
S IN G L E P U L S E
(TH ERM A L R ESPO N SE)
0.01
0.00001
0.0001
PD M
Notes:
1. D uty factor D = t1 / t 2
t1
t2
2. P eak TJ = P DM x Z thJC + T C
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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A
1
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFZ24N.PDF ] | |
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