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PDF FMM75-01F Data sheet ( Hoja de datos )

Número de pieza FMM75-01F
Descripción HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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FMM 75-01F
HiPerFETTM Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PACTM
ID25 = 75 A
VDSS = 100 V
RDSontyp. = 18 m
Preliminary data
3
T1
5
4
T2
1
2
1
5
MOSFET T1/T2
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
dv/dt
EAR
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
100 V
±20 V
TC = 25°C
TC = 90°C
75 A
50 A
(body diode) TC = 25°C
(body diode) TC = 90°C
100 A
60 A
VDS < VDSS; IF 300A;diF/dt⎮≤ 100A/µs; RG = 2
TVJ = 150°C
5 V/ns
TC = 25°C
30 mJ
Symbol
R
DSon
VGSth
IDSS
I
GSS
Q
g
Qgs
Q
gd
td(on)
tr
t
d(off)
tf
VF
trr
R
thJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
10
V;
ID
=
ID90
VDS = 20 V; ID = 4 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
V = ±20 V; V = 0 V
GS DS
VGS= 10 V; VDS = 0.5 • VDSS; ID = ID90
18
2
0.25
180
35
85
25 m
4V
0.3 mA
mA
200 nA
nC
nC
nC
VGS= 10 V; VDS = 0.5 • VDSS
ID = ID90; RG = 2
20 ns
60 ns
80 ns
60 ns
(body diode) IF = 75 A; VGS = 0 V
(body diode) IF = 37.5A; -di/dt = 100A/µs; VDS = 25V
with heat transfer paste
1.2
300
0.93
1.5 V
ns
0.5 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• HiPerFETTM technology
- low RDSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
supplies
1-2
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