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Número de pieza | MA2SD30 | |
Descripción | Schottky Barrier Diodes Silicon epitaxial planar type | |
Fabricantes | Panasonic Semiconductor | |
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Schottky Barrier Diodes (SBD)
MA2SD30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: IR < 2 µA (at VR = 30 V)
• Optimum for high frequency rectification because of its short
reverse recovery time trr .
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward
surge current *
VR
VRRM
IF(AV)
IFM
IFSM
30
30
100
200
1
V
V
mA
mA
A
Junction temperature
Storage temperature
Tj 125
Tstg −55 to +125
°C
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
0.80+–00..0035
1
Unit: mm
0.60+–00..0035
0.12+–00..0025
0.01±0.01
2
0.30±0.05
5˚
0+–00.05
Marking Symbol: 8N
1: Anode
2: Cathode
SSMini2-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current
Forward voltage
Terminal capacitance
Reverse recovery time *
IR1 VR = 10 V
IR2 VR = 30 V
VF1 IF = 10 mA
VF2 IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
0.3
2
0.38 0.44
0.51 0.58
9
1
µA
V
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *: trr measurement circuit
Pulse Generator
(PG-10N)
Rs = 50 Ω
Bias Application Unit (N-50BU)
A
Wave Form
Analyzer
(SAS-8130)
Ri = 50 Ω
VR
Input Pulse
tr tp
10%
t
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Publication date: October 2003
SKH00130AED
DataSheet4 U .com
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MA2SD30.PDF ] |
Número de pieza | Descripción | Fabricantes |
MA2SD30 | Schottky Barrier Diodes Silicon epitaxial planar type | Panasonic Semiconductor |
MA2SD31 | Silicon epitaxial planar type | Panasonic Semiconductor |
MA2SD32 | Silicon epitaxial planar type | Panasonic Semiconductor |
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