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PDF IRHF9230 Data sheet ( Hoja de datos )
| Número de pieza | IRHF9230 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 91312E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF9230
JANSR2N7390
200V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF9230 100K Rads (Si)
IRHF93230 300K Rads (Si)
RDS(on)
0.80Ω
0.80Ω
ID QPL Part Number
-4.0A JANSR2N7390
-4.0A JANSF2N7390
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-4.0
-2.4 A
-16
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
±20
171
-4.0
2.5
-27
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03
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1 page  
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Pre-Irradiation
IRHF9230
2000
1600
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
20 ID = -4.0A
16
VDS =-160V
VDS =-100V
VDS =-40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.5
VGS = 0 V
1.0 1.5 2.0 2.5 3.0 3.5
-VSD,Source-to-Drain Voltage (V)
4.0
Fig7. TypicalSource-DrainDiode
ForwardVoltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150 °C
Single Pulse
0.1
1 10 100
-VDS, Drain-to-Source Voltage (V)
1000
Fig8. MaximumSafeOperatingArea
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHF9230.PDF ] | |
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