|
|
Número de pieza | IRHF57230 | |
Descripción | (IRHF5x230) RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRHF57230 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! www.DataSheet4U.com
PD - 93788A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57230 100K Rads (Si)
IRHF53230 300K Rads (Si)
IRHF54230 600K Rads (Si)
IRHF58230 1000K Rads (Si)
RDS(on)
0.22Ω
0.22Ω
0.22Ω
0.275Ω
ID
7.3A
7.3A
7.3A
7.3A
IRHF57230
200V, N-CHANNEL
4# TECHNOLOGY
c
TO-39
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
7.3
4.5 A
29
25 W
0.2 W/°C
±20 V
110 mJ
7.3 A
2.5 mJ
7.0
-55 to 150
V/ns
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/15/02
DataSheet4 U .com
1 page www.DataSheet4U.com
Pre-Irradiation
IRHF57230
1800
1500
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
900
Coss
600
300 Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 7.3A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0
VSD ,Source-to-Drain Voltage (V)
2.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
DataSheet4 U .com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRHF57230.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHF57230 | (IRHF5x230) RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) | International Rectifier |
IRHF57230SE | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | International Rectifier |
IRHF57234SE | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |