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PDF IRHF58130 Data sheet ( Hoja de datos )
| Número de pieza | IRHF58130 | |
| Descripción | (IRHF5x130) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
| Fabricantes | International Rectifier | |
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PD - 93789A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level
IRHF57130 100K Rads (Si)
IRHF53130 300K Rads (Si)
IRHF54130 600K Rads (Si)
IRHF58130 1000K Rads (Si)
RDS(on)
0.08Ω
0.08Ω
0.08Ω
0.10Ω
ID
11.7A
11.7A
11.7A
11.7A
IRHF57130
100V, N-CHANNEL
R5 TECHNOLOGY
TO-39
International Rectifier’s R5TM technology provides Features:
high performance power MOSFETs for space appli- n Single Event Effect (SEE) Hardened
cations. These devices have been characterized for n Ultra Low RDS(on)
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
n
n
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
of low RDS(on) and low gate charge reduces the power n Repetitive Avalanche Ratings
losses in switching applications such as DC to DC n Dynamic dv/dt Ratings
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
11.7
7.4 A
47
25 W
0.2 W/°C
±20 V
173 mJ
11.7
A
2.5 mJ
4.9
-55 to 150
V/ns
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
3/2/00
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Pre-Irradiation
IRHF57130
2000
1600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1200
800
Ciss
Coss
400
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 11.7A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 25° C
TJ = 150° C
10
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
3.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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