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PDF IRHNJ58Z30 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ58Z30 | |
| Descripción | (IRHNJ5xZ30) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
| Fabricantes | International Rectifier | |
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PD - 93751B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57Z30 100K Rads (Si)
IRHNJ53Z30 300K Rads (Si)
IRHNJ54Z30 600K Rads (Si)
IRHNJ58Z30 1000K Rads (Si)
RDS(on)
0.020Ω
0.020Ω
0.020Ω
0.025Ω
ID
22A*
22A*
22A*
22A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by internal wire diameter
For footnotes refer to the last page
www.irf.com
IRHNJ57Z30
30V, N-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
07/30/02
DataSheet4 U .com
1 page  
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Pre-Irradiation
IRHNJ57Z30
4000
3200
2400
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Ciss
1600
800
Crss
0
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 22A
15
VDS = 24V
VDS = 15V
VDS = 6V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100 1000
TJ = 150° C
10
TJ = 25° C
VGS = 0 V
1
0.4 0.8 1.2 1.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
10ms
VDS , Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5
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