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PDF IRHNJ53230 Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ53230 | |
| Descripción | (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
| Fabricantes | International Rectifier | |
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PD - 93753A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57230 100K Rads (Si)
IRHNJ53230 300K Rads (Si)
IRHNJ54230 600K Rads (Si)
IRHNJ58230 1000K Rads (Si)
RDS(on)
0.20Ω
0.20Ω
0.20Ω
0.25Ω
ID
13A
13A
13A
13A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ57230
200V, N-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
13
8.2 A
52
75 W
0.6 W/°C
±20 V
60 mJ
13 A
7.5 mJ
4.4
-55 to 150
V/ns
oC
300 ( for 5s )
1.0 ( Typical )
g
1
07/22/02
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1 page  
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Pre-Irradiation
IRHNJ57230
2000
1600
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 13A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
1
TJ = 25 ° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
10
100us
1ms
1
TC = 25°C
TJ = 150° C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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