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PDF IRHNA9260 Data sheet ( Hoja de datos )

Número de pieza IRHNA9260
Descripción (IRHNA9260 / IRHNA93260) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Fabricantes International Rectifier 
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PD - 93969
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA9260
JANSR2N7426U
200V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA9260 100K Rads (Si)
IRHNA93260 300K Rads (Si)
RDS(on)
0.154
0.154
ID QPL Part Number
-29A JANSR2N7426U
-29A JANSF2N7426U
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
-29
-18
-116
300
2.4
±20
500
-29
30
-20
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
11/21/00
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Pre-Irradiation
IRHNA9260, JANSR2N7426U
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -29A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 50 100 150 200 250 300 350
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
-VSD ,Source-to-Drain Voltage (V)
3.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100µs
10 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
10ms
100 1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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